MODELING OF LPCVD SILICON NITRIDE PROCESS
نویسندگان
چکیده
منابع مشابه
LPCVD silicon-rich silicon nitride films for applications in micromechanics, studied with statistical experimental design*
A systematic investigation of the influence of the process parameters temperature, pressure, total gas flow, and SiH2Cl2 :NH3 gas flow ratio on the residual stress, the refractive index, and its nonuniformity across a wafer, the growth rate, the film thickness nonuniformity across a wafer, and the Si/N incorporation ratio of low pressure chemical vapor deposition SixNy films has been performed....
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ژورنال
عنوان ژورنال: Le Journal de Physique Colloques
سال: 1989
ISSN: 0449-1947
DOI: 10.1051/jphyscol:1989511